Publications

2021

  • T. K. Truttmann, J.-J. Zhou, I-Te Lu, A. K. Rajapitamahuni, F. Liu, T. Mates, M. Bernardi, and B. Jalan, Combined Experimental-Theoretical Study of Electron Mobility-Limiting Mechanisms in SrSnO3, Comm. Phys. (2021) (in press)
  • J. Yue, Y. Ayino, T. K. Truttmann, M. N. Gastiasoro, E. Persky, A. Khanukov, D. Lee, L. R. Thoutam, B. Kalisky, R. M. Fernandes, V. S. Pribiag, and B. Jalan, "Anomalous Transport in High-Mobility Superconducting SrTiO3 Thin Films" submitted (2021) https://arxiv.org/abs/2107.10904
  •  L. R. Thoutam, T. K. Truttmann, A. K. Rajapitamahuni, and B. Jalan, "Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior" under review (2021) http://arxiv.org/abs/2107.04965
  • W. Nunn, T. K. Truttmann and B. Jalan, "A Review of Molecular Beam Epitaxy of Wide Bandgap Complex Oxide Semiconductors", J. Mater. Res. (in press) (2021) (invited review article)
  • W. Nunn, S. Nair, H. Yun, A. K. Manjeshwar, A. Rajapitamahuni, D. Lee, K. A. Mkhoyan, and B. Jalan, "Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2" APL Mater. (in press) (2021) https://arxiv.org/abs/2107.00193 (Editor's Pick)
  • S. Hameed, J. Joe, L. R. Thoutam, J. Garcia-Barriocanal, B. Yu, G. Yu, S. Chi, T. Hong, T. J. Williams, J. W. Freeland, P. M. Gehring, Z. Xu, M. Matsuda, B. Jalan, M. Greven, "Growth and characterization of large (Y,La)TiO3 and (Y,Ca)TiO3 single crystals", under review (arXiv:2106.10253).
  • W. Nunn, A. K. Manjeshwar, J. Yue, A. Rajapitamahuni, T. K. Truttmann and B. Jalan, Novel Synthesis Approach for “Stubborn” Metals and Metal Oxides, Proc. Natl. Acad. Sciences 118, e2105713118 (2021) (Highlighted on the front page of the DOE Office of Science website plus by several news outlets, including Science Daily, EurekAlert, PhysOrg, ScienceNewsNet, Materials Today, etc.)
  • H. Yun, A. Prakash, T. Birol, B. Jalan, and K. A. Mkhoyan, "Direct observation and consequences of dopant segregation inside and outside dislocation cores in perovskite BaSnO3" Nano Lett. 21, 4357 (2021)
  • W. Nunn, S. Sandlass, M. Wegner, R. Haislmaier, F. A. Kumar, M. Tangi, J. LeBeau, E. Quandt, R. D. James, and B. Jalan, "Hybrid Molecular Beam Epitaxy Growth of BaTiO3 Films" J. Vac. Sci. Technol. A, 39, 040404 (2021) (Editor's Pick)
  • T. K. Truttmann, F. Liu, J. G. Barriocanal, R. D. James, and B. Jalan, "Strain Relaxation via Phase Transformation in SrSnO3" ACS Appl. Electron. Mater. 3 1127 (2021)
  • M. Naamneh, A. Prakash, E. B. Guedes, W. H. Brito, M. Shi, N. C. Plumb, B. Jalan, and M. Radovic, Surface state at BaSnO3 evidenced by angle-resolved photoemission spectroscopy and ab initio calculations, (under review) (2021) https://arxiv.org/abs/2101.03399
  • W. M. Postiglione, K. Ganguly, H. Yun, J. S. Jeong, A. Jacobson, L. Borgeson, B. Jalan, K. A. Mkhoyan, and C. Leighton, Structure-Property Relationships and Mobility Optimization in Sputtered La-doped BaSnO3 Films: Towards 100 cm2V-1s-1 Mobility, Phys. Rev. Mater. 5, 044604 (2021)
  • H. Yun, M. Topsakal, A. Prakash, B. Jalan, J. S. Jeong, T. Birol and A. Mkhoyan, Metallic line defect in wide-bandgap transparent perovskite BaSnO3, Sci. Adv. 7, eabd4449 (2021)
  • J. Wen, V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, SrSnO3 Metal-Semiconductor Field-Effect Transistor with GHz Operation, IEEE Electron Dev. Lett. 42, 74 (2021) (featured on the journal cover)
  • A. K. Rajapitamahuni, L. R. Thoutam, P. Ranga, S. Krishnamoorthy, and B. Jalan, Impurity Band Conduction in Si-doped β-Ga2O3 Films, Appl. Phys. Lett. 118, 072105 (2021)
  • A. Prakash, T. Wang, A. Bucsek, T. K. Truttmann, A. Fali, M. Cotrufo, H. Yun, J.-Woo Kim, P. J. Ryan, K. Andre Mkhoyan, A. Alù, Y. Abate, R. D. James, and B. Jalan, Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations, Nano Lett. 21 1246 (2021) (featured on the journal cover) 
  • V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, Optimizing Ohmic contacts to Nd-doped n-type SrSnO3, Appl. Phys. Lett. 118, 142104 (2021)
  • X. Cai, J. Yue, P. Xu, B. Jalan, and V. S. Pribiag, From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface, Phys. Rev. B 103, 115434 (2021)

2020

  • A. Prakash, T. Wang, R. Choudhary, G. Haugstad, W. L. Gladfelter, and B. Jalan, Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates, J. Vac. Sci. Technol. A 38, 063410 (2020) https://arxiv.org/abs/2008.12762 (2020)
  • J. Yue, N. F. Quackenbush, I. Laraib, H. Carfagno, S. Hameed, A. Prakash, L. R. Thoutam, J. M. Ablett, T. Lee, M. Greven, M. F. Doty, A. Janotti, and B. Jalan, Electronic Structure and Small Hole Polarons in YTiO3, Phys. Rev. Mater. (Rapid Communications) (in press) arXiv:2008.12754 (2020)
  • V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, S. J. Koester, SrSnO3 field-effect transistors with recessed gate electrodes, IEEE Electron Dev. Lett. 41, 1428 (2020)
  • Y. Ayino, J. Yue, T. Wang, B. Jalan, and V. Pribiag, Effects of paramagnetic pair-breaking and spin-orbital coupling on multi-band superconductivity, J. Phys.: Condens. Matter 32 38LT (2020)
  • S. R. Provence, S. Thapa, R. Paudel, T. Truttmann, A. Prakash, B. Jalan, and R. B. Comes, Machine learning analysis of perovskite oxides grown by molecular beam epitaxy, Phys. Rev. B  4, 083807 (2020).
  • H. Wang, A. Prakash, K. Reich, K. Ganguly, B. Jalan, and C. Leighton, Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating, APL Mater. 8, 071113 (2020)
  • A. N. Bucsek, W. Nunn, B. Jalan and R. D. James "Energy Conversion by Phase Transformation in the Small Temperature Difference Regime" Ann. Rev. Mater. Res. 50, 283 (2020)
  • H. Yun, A. Prakash, B. Jalan, J. S. Jeong, KA Mkhoyan, “STEM beam channeling in BaSnO3/LaAlO3 perovskite bilayers and visualization of 2D misfit dislocation network” Ultramicroscopy, 208, 112863 (2020)

2019

  • A. Prakash, N. F. Quackenbush, H. Yun, J. Held, T. Wang, T. Truttmann, J. M. Ablett, C. Weiland, T-L.  Lee, J. C. Woicik, KA. Mkhoyan and B. Jalan, “Separating electrons and donors in BaSnO3 via band engineering” Nano Lett. 19, 8920 (2019)
  • U. S. Alaan, F. J. Wong, J. J. Ditto, A. W. Robertson, E. Lindgren, A. Prakash, G. Haugstad, P. Shafer, A. T. N’Diaye, E. Arenholz, B. Jalan, N. D. Browning, and Y. Suzuki "Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd and Gd" Phys. Rev. Mater. (2019) (accepted)
  • T. Truttmann, A. Prakash, J. Yue, T. E. Mates, and B. Jalan, “Dopant solubility, and charge compensation in La-doped SrSnO3 films” Appl. Phys. Lett. 115, 152103 (2019)
  • J. Yue, L. R. Thoutam A. Prakash, T. Wang, and B. Jalan, “Unravelling the effect of electron-electron interaction on electronic transport in high-mobility stannate films” Appl. Phys. Lett. 115, 082102 (2019)
  • A. Bucsek, W. Nunn, B. Jalan and R. D. James, "The Direct Conversion of Heat to Electricity Using First-Order Phase Transformations in Ferroelectrics" Phys. Rev. Appl. 12 (3), 034043 (2019)
  • A. Prakash and B. Jalan, “Wide Bandgap Perovskite Oxides with High Room-Temperature Electron Mobility”, Adv. Mater. Interfaces 6, 1900479 (2019) (Invited progress report)
  • X. Cai, Y. Ayino, J. Yue, P. Xu, B. Jalan and VS. Pribaig, “Disentangling spin-orbit coupling and local magnetism in a quasi-2D electron system” Phys. Rev. B 100, 081402(R) (2019)
  • L. R. Thoutam, J. Yue, A. Prakash, T. Wang, K. E. Elangovan, and B. Jalan, “Electrostatic control of insulator–metal transition in La-doped SrSnO3 films” ACS Appl. Mater. Interfaces11 (8), 7666 (2019) 
  • L. Thoutam, J. Yue, P. Xu and B. Jalan, “Hopping transport in SrTiO3/NdTiO3-x/SrTiO3 heterostructures”Phys. Rev. Mater. 3, 065006 (2019).
  • Y. Ayono, J. Yue, T. Wang, B. Jalan and V. Pribiag, “Evidence for multi-band superconductivity above the Pauli limit in NdxSr1-xTiO3” (2019) http://arxiv.org/abs/1812.02875 (under review)
  • Abhinav Prakash and Bharat Jalan, Molecular beam epitaxy for oxide electronics. In: Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics (ed. Hajime Asahi and Yoshiji Horikoshi), John Wiley & Sons, 423-452 (2019) (DOI: 10.1002/9781119354987.ch26)

Patents

  • A. Prakash, T. Wang, B. Jalan, "Conductive Films" US Patent App. 16/125,187, 2019
  • R. D. James, and B. Jalan, "Conversion of heat to electricity using phase transformations in ferroelectric oxide capacitors" US Patent App. 15/996,196, 2019

2018

  • T. Wang, A. Prakash, Y. Dong, T. Truttmann, A. Bucsek, R. James, D. D. Fong, J.-W. Kim, P. J. Ryan, H. Zhou, T. Birol, and B. Jalan, “Engineering SrSnO3 Phases and Electron Mobility at Room Temperature using Epitaxial Strain” ACS Appl. Mater. & Interfaces (2018)
  • V. R. S. K. Chaganti, A. Prakash, J. Yue, B. Jalan, and S. J. Koester, “Demonstration of a depletion-mode SrSnO3 n-channel MESFET”  IEEE Elec. Dev. Lett. 39, 1381 (2018)
  • H. Yun, K. Ganguly, W. Postiglione, B. Jalan, C. Leighton, K. A. Mkhoyan, and J. S. Jeong, “Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy” Sci. Rep. 8, 10245 (2018)
  • J. Yue, A. Prakash, M. Robbins, S. Koester, and B. Jalan, “Depletion Mode MOSFET using La-doped BaSnO3 as a Channel Material” ACS Appl. Mater. & Interfaces 10, 21061 (2018)
  • W. Nunn, A. Prakash, A. Bhowmik, R. Haislmaier, J. Yue, J. M. Garcia Lastra, and B. Jalan, “Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy- grown BaSnO3 films” APL Mater. APL Mater. 6, 066107 (2018) 
  • S.A. Chambers, Y. Du, Z. Zhu, J. Wang, M. J. Wahila, L. F. J. Piper, A. Prakash, J. Yue, B. Jalan, S. R. Spurgeon, D. M. Kepaptsoglou, Q. M. Ramasse, P. V. Sushko, “Interconversion of intrinsic defects in SrTiO3 (001)” Phys. Rev. B 97, 245204 (2018) 
  • L. Chen, X. Wang, B. Jalan, S. Chen, and Y. Hou, “The Roles of point defects and lattice strain in thermal transport in perovskite Barium Stannate” J. Phys. Chem. C 122, 11482 (2018)
  • S. Arezoomandan, A. Prakash, A. Chanana, J. Yue, A. Mao, S. Blair, A. Nahata, B. Jalan, and B. Sensale-Rodriguez “THz characterization and demonstration of visible-transparent/terahertz-functional electromagnetic structures in ultra-conductive La-doped BaSnO3 Films”, Sci. Rep. 8, 3577 (2018)
  • Y. Ayino, P. Xu, J. T-Lazo, J. Yue, B. Jalan and V. Pribiag, “Ferromagnetism and spin-dependent transport at a complex oxide interface” Phys. Rev. Mater. (Rapid Communication) 2, 031401(R) (2018)
  • H. Yun, M. Topsakal, A. Prakash, K. Ganguly, C. Leighton, B. Jalan, R. M. Wentzcovitch, K. A. Mkhoyan, J. S. Jeong, “Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations”, J. Vac. Sci. Technol. A 36, 031503 (2018)

2017

2016

  • T. Wang, K. C. Pitike, Y. Yuan, S. M. Nakhmanson, V. Gopalan and B. Jalan, “Chemistry, Growth Kinetics and Epitaxial Stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor”, APL Mat. 4, 126111, (2016
  • J. S. Jeong, M. Topsakal, P. Xu, B. Jalan, R. M. Wentzcovitch, and K. A. Mkhoyan, “A New Line Defect in NdTiO3 Perovskite”, Nano Lett. 16, 6816 (2016)
  • P. Xu, Y. Ayino, C. Cheng, V. S. Pribiag, R. B. Comes, P. V. Sushko, S. A. Chambers, and B. Jalan, “Predictive control over charge density in the two-dimensional electron gas at the polar/non-polar NdTiO3/SrTiO3 interface”, Phys. Rev. Lett. 117, 106803 (2016)
  • S. Arezoomandan, H. C. Quispe, A. Chanana, P. Xu, A. Nahata, B. Jalan, and B. Sensale-Rodriguez, “Large Nanoscale Electronic Conductivity in Complex Oxide Heterostructures with Ultra High Electron Density”, APL Mat. 4, 076107 (2016)
  • P. Ambwani, P. Xu, G. Haugstad, J. S. Jeong, R. Dong, K. A. Mkhoyan, B. Jalan, C. Leighton, “Defects, stoichiometry, and electronic transport in SrTiO3 - epilayers: A high pressure oxygen sputter deposition study”, J. Appl. Phys. 120, 055704 (2016)
  • J. S. Jeong, M. L. Odlyzko, P. Xu, B. Jalan and K. A. Mkhoyan, “Probing core-electron orbitals by scanning transmission electron microscopy and measuring the delocalization of core-level excitations” Phys. Rev. B 93, 165140 (2016)
  • S. A. Chambers, T. C. Kaspar, A. Prakash, G. Haugstad, and B. Jalan, “Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions” Appl. Phys. Lett. 108, 152104 (2016)
  • P. Xu, T. C. Droubay, J. S. Jeong, K. A. Mkhoyan, P. V. Sushko, S. A. Chambers and B. Jalan, “Quasi two-dimensional ultra-high carrier density in a complex oxide broken-gap heterojunction”, Adv. Mater. Interfaces 3, 1500432 (2016)

2015

2014

  • P. Xu, D. Phelan, J. S. Jeong, K. A. Mkhoyan, and B. Jalan, “Stoichiometry-driven Metal-to-Insulator Transition in NdTiO3/SrTiO3Heterostructures”, Appl. Phys. Lett. 104, 082109 (2014)

2013

  • T. Wang, K. Ganguly, P. Marshal, P. Xu, and B. Jalan, “Critical thickness and strain relaxation in MBE-grown SrTiO3 films”, Appl. Phys. Lett.103, 212904 (2013)
  • J. S. Jeong, P. Ambwani, B. Jalan, C. Leighton, and K. A. Mkhoyan, “Observation of electrically-inactive interstitials in Nb-doped SrTiO3”, ACS Nano 7, 4487 (2013)
  • S. J. Allen, B. Jalan, S. B. Lee, D. Ouellette, G. Khalsa, J. Jaroszynski, S. Stemmer and A. MacDonald, “ Conduction band edge and Shubnikov-de Haas effect in low-electron density SrTiO3” Phys. Rev. B 88, 045114 (2013)

2012 (Before UMN)

  • A.M. Kaiser, A.X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K.   Kobayashi, W. Drube, S. Stemmer, and C. S. Fadley, “Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy” Appl. Phys. Lett. 100, 261603 (2012)
  • A. Janotti, B. Jalan, S. Stemmer, and C. G. Van de Walle, “Effects of doping on the lattice parameter of SrTiO3” Appl. Phys. Lett. 100, 262104 (2012)

2011

  • D.J. Keeble, B. Jalan, L. Ravelli, W. Egger, G. Kanda, and S. Stemmer, “Suppression of vacancy defects in epitaxial La-doped SrTiO3 films” Appl. Phys. Lett. 99. 232905 (2011)
  • J. Son, B. Jalan, A. P. Kajdos, L. Balents, S. J. Allen, and S. Stemmer, “Probing the metal-insulator transition of NdNiO3 by electrostatic doping”, Appl. Phys. Lett. 99, 192107 (2011)
  • Dong-Wook Oh, J. Ravichandran, C. W Liang, W. Siemons, B. Jalan, C. M. Brooks, M. Huijben, D. G.  Schlom, S. Stemmer, L. W. Martin, A. Majumdar, R. Ramesh, and D. G. Cahill, “Thermal conductivity as a metric for the crystalline quality of SrTiO3 epitaxial layers,” Appl. Phys. Lett. 98, 221904 (2011)
  • B. Jalan, S. J. Allen, G. Beltz, P. Moetakef and S. Stemmer, “Enhancing the electron mobility in SrTiO3 with strain,” Appl. Phys. Lett. 98, 132102 (2011)

2010

  • P. Moetakef, J. Y. Zhang, A. Kozhanov, B. Jalan, R. Seshadri, S. J. Allen and S. Stemmer, “Transport in ferromagnetic GdTiO3/SrTiO3 heterostructures,” Appl. Phys. Lett. 98, 112110 (2011)
  • B. Jalan and S. Stemmer, ”Large Seebeck coefficients and thermoelectric power factor of La-doped SrTiO3 thin films,” Appl. Phys. Lett. 97, 042106 (2010)
  • B. Jalan, S. Stemmer, S. Mack and S. J. Allen, “Two-dimensional electron gas in delta-doped SrTiO3,” Phys. Rev. B 82, 081103 (2010)
  • J. Son, P. Moetakef, B. Jalan, O. Bierwagen, N. J. Wright, R. Engel-Herbert and S. Stemmer, ”Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2/Vs,” Nat. Mater. 9, 482 (2010)

2009

2008