Journal Articles | Bharat Jalan | MBE Lab | Quantum Materials Design and Synthesis Group

Recent cover arts

2026

J. Lee, J. Kim, S. Nair, S. Jeong, C. Kim, J.-P.-So, B.-J. Yang, B. Jalan, H. Yoo, F. Rana, T. Oh, and H.-G. Park, Magneto-Optical Detection of Anisotropic Spin Currents in Altermagnetic RuO₂, submitted (2026)
Z. Yang, S. Varshney, S. S. Kumar, T. Steegemans, R. Bjørk, D. V. Christensen, and B. Jalan, High-mobility SrTiO₃ thin films with extraordinary magnetoresistance exceeding 9000%, submitted (2026)
Z. Yang, S. Nair, S. Lee, T. Low, and B. Jalan, Electrochemical Control of Metal-Insulator Transition and Spin-Orbit Coupling in Ultrathin IrO₂, submitted (2026)
S. Varshney, S. Choo, H. Liu, S. Sharma, D. K. Lee, N. Pryds, R. D. James, and B. Jalan, Lattice engineering by twisting 3D single-crystalline membranes: A perspective, submitted (2026)
W. Sandholt, N. Gauquelin, J. Mangeri, E. Dollekamp, G. Panchal, T. Chennit, A. De Backer, A. Annys, N. Vitaliti, A. R. Insinga, J. M. Hansen, R. Mandal, D. R. Rodrigues, S. van Aert, K. I. Wurster, A. Bhowmik, I. E. Castelli, S. B. Simonsen, T. S. Jespersen, R. D. James, B. Jalan, J. Verbeeck, J. M. G. Lastra, and N. Pryds, Designing ordered dislocation networks in twisted bicrystal transition metal oxides, submitted (2026) [arxiv]
S. Jung, J. Koo, H. Lee, D. Won, D. Kim, J. Yoo, M. Park, S. Park, S. Lim, T. Kim, B. Jalan, G. Qiu, K. Lee, and H. Bae, Revealing Deep Trap States of Ultra-wide Bandgap in La-Doped SrSnO3 Perovskite Field Effect Transistors by Polychromatic Lights, submitted (2026)
S. G. Jeong, S. Lee, J. Y. Oh, B. Y. X. Lin, A. Santhosh, J. M. LeBeau, A. J. Grutter, W. S. Choi, T. Low, V. Lauter, and B. Jalan, Emergence of unconventional magnetic order in strain-engineered RuO₂/TiO₂ superlattices, submitted (2026) [arxiv]
N. Pryds, F. Gunkel, F. Trier, Z. Jovanović, L. Kornblum, M. G-Hernandez, M. Brandbyge, P. Bøggild, V. Harbola, Y.-J. Wu, J. Mannhart, J. Santamaria, C.-B. Eom, S. Varshney, S. Choo, D. K. Lee, N. P. B. Aetukuri, B. Jalan, D. Pesquera, J. Santiso, J. Schwarzkopf, J. Martin, P. Salles, M. Coll, G. Koster, M. Spreitzer, X. Zhang, J. Kim, M. Radovic, J. Petrovic, J. Song, H. N. Lee, M. Nord, C. J. Roh, G. Segantini, A. D. Caviglia, H. Jani, R. Xu, S. S. Hong, L. W. Martin, I. C. G. van den Bosch, C. Baeumer, L. Alff, S. Preu, J. Knabe, R. Dittmann, Bridging the Gap: Exploring Interfaces Between 2D Materials and Freestanding Oxide Membranes, under review (2026)
J. D. S. Forte, S. G. Jeong, A. Santhosh, S. Lee, B. Jalan, and T. Low, Strain Engineering of Altermagnetic Symmetry in Epitaxial RuO₂ Films, submitted (2026) [arxiv]
I. H. Choi^☨, S. G. Jeong^☨, J. H. Lee, S. Kang, S. Nair, C. Kim, D. Wulferding, B. Jalan, and J. S Lee, Strain-induced Dynamic Spin-Phonon Coupling in Epitaxial RuO₂ Films, submitted (2026). ^☨Equal contributions
K. S. Kumar, D. Barbalas, R. Bhandia, D. Lee, S. Varshney, B. Jalan, and N. P. Armitage, Absence of two-phonon quasi-elastic scattering in the normal state of doped–SrTiO₃ by THz pump-probe spectroscopy, under review (2026) [arxiv]
S. Lee, S. G. Jeong, J.-P. Wang, B. Jalan, and T. Low, Strain-Driven Altermagnetic Spin Splitting Effects in RuO₂, Nano Lett. (accepted) (2026)
Y. Zhang^†, S. G. Jeong^†, L. Buiarelli, S. Lee, Y. Guo, J. Wen, H. Li, S. Nair, I. H. Choi, Z. Ren, Z. Yue, A. Fedorov, S.-K. Mo, J. Kono, J. S. Lee, T. Low, T. Birol, R. M. Fernandes, M. Radovic, B. Jalan, M. Yi, Observation of mirror-odd and mirror-even spin texture in ultra-thin epitaxially-strained RuO₂ films, Sci. Adv. (in press) (2026). ^☨Equal contributions [arxiv]
J.-J. Do, B. K Chantigian, D. Upcraft, W. Lee, H.-S. Shin, N. C. Lindquist, H. Jeon, J. W. Jung, B. Jalan, and S.-H. Oh, Selective Growth of Bulk-Like Perovskite in Plasmonic Nanoholes for Enhanced Two-Photon-Excited Emission, Adv. Mater. (accepted) (2026)
M. Mohseni, S. Varshney, S. G. Jeong, A. Walton, C. D. Frisbie, and B. Jalan, Wafer-scale High-k SrTiO₃ Dielectrics with Rational Barrier-layer Design for Low Leakage and High Charge Density, J. Vac. Sci. Technol. A 44, 043203 (2026)
J. Koo, W. Sun, D. Kim, C. Zhu, K. Lee, H. Bae, B. Jalan, and G. Qiu, Demonstration of High-Performance Ultra-Wide Bandgap SrSnO₃ Top-Gated MOSFETs, IEEE Electron Dev. Lett. 42, 74 (2026) (accepted )
M. Vitale-Sullivan, R. Jana, S. Nair, S. G. Jeong, M. Neurock, B. Jalan, and K. Stoerzinger, Facet-Dependent Selectivity of Rutile IrO₂ for Oxygen and Chlorine Evolution Reactions, ChemElectroChem (2026) (in press)
S. Padhye, J. Yue, S. Varshney, B. Jalan, D. G. Gordon, and E. Mikheev, Superconducting Dome in Homoepitaxial Strontium Titanate Thin Films, Phys. Rev. B, (Rapid commun.). (accepted) (2026) [arxiv]
D. Kim, M. Mohseni, Z. Yang, A. K. Manjeshwar, and B. Jalan, Temperature- and Frequency-Dependent Dielectric Behavior in Epitaxial CaSnO₃ Films, Appl. Phys. Lett. 128, 112907 (2026)
F. Liu^☨, Z. Yang^☨,Y. Luo^☨, S. Guo, C. Zhang, S. Choo, X. Xu, X. Wang, K. A. Mkhoyan, M. Bernardi, and B. Jalan, Understanding Polaronic Transport in Anatase TiO₂ Films by Combining Precise Synthesis and First-Principles Many-Body Theory, Rep. Prog. Phys. 89, 028003 (2026) ^☨Equal contributions
I. H. Choi^☨, S. G. Jeong^☨, B. Jalan, and J. S. Lee, Exploring Altermagnetism in RuO₂: From Conflicting Experiments to Emerging Consensus, Nano Convergence 13, 1 (2026) ^☨Equal contributions
S. G. Jeong^†, I. H. Choi^†, S. Nair, L Buiarelli, B. Pourbahari, J. Y. Oh, N. Bassim, A. Seo, W. S. Choi, R. M. Fernandes, T. Birol, L. Zhao, J. S. Lee, and B. Jalan, Altermagnetic polar metallic phase in ultra-thin epitaxially-strained RuO₂ films, PNAS 123 (10) e2526641123 (2026) ^†Equal contribution
S. G. Jeong, B. Y. X. Lin, M. Jin, I. H. Choi, S. Lee, Z. Yang, S. Nair, R. Choudhary, J. Parikh, A. Santhosh, M. Neurock, K. A. Stoerzinger, J. S. Lee, T. Low, Q. Tu, J. M. LeBeau, and B. Jalan, Strain-Stabilized Interfacial Polarization Tunes Work Function Over 1 eV in RuO₂/TiO₂ Heterostructures, Nat. Commun. 17, 2516 (2026)
C. Zhang, F. Liu, D. Kim, X. Xu, S. Guo, K. A. Mkhoyan, T. Feng, B. Jalan, and X. Wang, Probing Phonon Mean-Free-Path Distribution via Thickness-Dependent Thermal Conductivity in Epitaxial SrSnO_3,Materials Today Physics 60, 101991 (2026)

2025

A. Bragg, F. Liu, Z. Yang, N. Hirshberg, M. Garber, B. Lukaskawcez, L. Thompson, S. MacDonald, H. Binger, D. Uram, A. Bucsek, B. Jalan, and A. McLeod, Machine-Learning-Enabled Discovery of Coexisting Phases through Nanospectroscopy of a Wide-Bandgap Semiconductor, Nano Lett. 25, 17997 (2025)
S. Choo, S. Varshney, J. Shah, A. K. Manjeshwar, D. K. Lee, K. A. Mkhoyan, R. D. James and B. Jalan, Hybrid MBE Route to Adsorption-Controlled Growth of BaTiO₃ Membranes with Robust Polarization Switching, Nano Lett. 25, 17467 (2025)
B. Jalan, From Breaking Rules to Making Rules in Materials Science, Sci. Adv. 11, eaed2475 (2025)
Q. Jia, S. Nair, Y. Yang, S. G. Jeong, S. Lee, D. Tonini, S. Liang, Y.-C. Chen, O. J. Benally, B. Dixit, T. Low, B. Jalan, and J.-P. Wang Correction of Out-of-Plane Spin Torque Extraction from Second Harmonic Hall Measurements: The Role of Antisymmetric Planar Hall Effects, Phys. Rev. B 112, 174409 (2025)
C. Ahn, S. Chambers, A. Demkov, J. Ekerdt, B. Jalan, L. Kornblum, J. Ngai, A. Posadas, and F. Walker, Handbook of Molecular Beam Epitaxy of Oxide Materials: Volume 1: Molecular Beam Epitaxy of Oxides World Scientific (2025).
W. Sun, J. Koo, D. Kim, H. Lee, R. Raj, C. Zhu, K. Lee, K. A. Mkhoyan, H. Bae, B. Jalan and G. Qiu, High-Performance Ultra-Wide-Bandgap CaSnO₃ Metal-Oxide-Semiconductor Field-Effect Transistors, Adv. Electr. Mater. e00459 (2025)
A. K. Manjeshwar, Z. Yang, C.-H. Liao, J. Wen, S. J. Koester, R. D. James, and B. Jalan, Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO₃Films, Nano Lett. 25, 14246 (2025)
B. Lukaskawcez, S. Varshney, S. Choo, S. H. Park, D. Seo, L. Thompson, D. Uram, H. Binger, S. Koester, S.-H. Oh, T. Low, B. Jalan, and A. McLeod, Interfacial strong coupling and negative dispersion of propagating polaritons in free-standing oxide membranes, Adv. Optical Mater. e01452 (2025)
L. G. Corcoran, E. M. Monzo, C. E. Onuoha, S. Varshney, H. S. Lee, C. Fretham, B. Jalan, A. V. McCormick, And R. L. Penn, Electron Microscopy Transfer System to Protect Atmosphere-sensitive Materials for Scanning Electron Microscopy Characterization, Micros. Res. Tech. (accepted) (2025)
S. Ghosh, F. Liu, J. Shah, S. Guo, M. Tanwar, M. Neurock, T. Birol, B. Jalan, K. Andre Mkhoyan, Defect engineering in BaSnO₃ and SrSnO₃ thin films through nanoscale substrate patterning, Nat. Comm. 16, 9521 (2025)
R. Choudhary, A. Rajapitamahuni, S. Guo, Q. Jiang, J.-H. Chu, K. A. Mkhoyan, and B. Jalan, Intrinsic vs. Extrinsic Magnetic Transitions in Sr₃Ru₂O₇ films, J. Mater. Res. 40, 2351 (2025). Highlighted on Journal Cover.
D. Seo, S. Mishra, R. Li, J. Wen, S. G. Jeong, B. Lukaskawcez, A. S. McLeod, B. Jalan, and S. J. Koester, A Strategic Approach for Enhanced p-Type Doping of WSe₂ p-MOSFETs Using an Atomic Oxidation Process, Adv. Elec. Mater. e00108 (2025)
S. G. Jeong, I. H. Choi, S. Lee, J. Y. Oh, S. Nair, J. H. Lee, C. Kim, A. Seo, W. S. Choi, T. Low, J. S. Lee, and B. Jalan, Anisotropic Strain Relaxation-Induced Directional Ultrafast Carrier Dynamics in RuO₂ Films, Sci. Adv. 11, eadw7125 (2025)
S. G. Jeong, S. Lee, B. Lin, Z. Yang, I. H. Choi, J. Y Oh, S. Song, S. W. Lee, S. Nair, R. Choudhary, J. Parikh, S. Park, W. S. Choi, J. S. Lee, J. M. LeBeau, T. Low, and B. Jalan, Metallicity and Anomalous Hall Effect in Epitaxially-Strained, Atomically-thin RuO₂ Films, PNAS 122 (24) e2500831122
Y. Yang, S. Nair, Y. Fan, Y. -C. Chen, Q. Jia, O. J. Benally, S. Lee, S. G. Jeong, Z. Yang, T. Low, B. Jalan, and J.-P. Wang, Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO₂, Appl. Phys. Lett. 126, 102403 (2025)
S. Ghosh, F. Liu, S. Nair, B. Jalan, and K. A. Mkhoyan, Site-specific plan-view (S)TEM sample preparation from thin films using a dual-beam FIB-SEM, Ultramicroscopy 114104 (2025)
R. Choudhary, and B. Jalan, Atomically precise synthesis of oxides with hybrid molecular beam epitaxy, Device (cell press) 3, 100711 (2025) (invited article)
F. Liu, N. Szymanski, K. Noordhoek, H. S. Shin, D. Kim, C. J. Bartel, and B. Jalan, Unraveling the growth dynamics of rutile Sn_1-xGe_xO₂ using theory and experiment, Nano Lett. 25, 299 (2025)

2024

L. Wang^†, Z. Yang^†, K. P. Koirala, M. E. Bowden, J. W. Freeland, P. V. Sushko, C. T. Kuo, S. A. Chambers, C. Wang, B. Jalan, and Y. Du, Interfacial charge transfer and its impact on transport properties of LaNiO₃/LaFeO₃ superlattices, Sci. Adv. 10, eadq6687 (2024), ^†Equal contribution
S. Choo^†, S. Varshney^†, H. Liu, S. Sharma, R. D. James, and B. Jalan, From oxide epitaxy to freestanding membranes: opportunities and challenges, Sci. Adv. 10, eadq8561 (2024), ^†Equal contribution
D. Sen, H. Ravichandran, M. Das, P. Venkatram, S. Choo, S. Varshney, Z. Zhang, Y. Sun, J. Shah, S. S. Radhakrishnan, A. Saha, S. Hazra, K. A. Mkhoyan, V. Gopalan, Y. Yang, B. Jalan, and S. Das, Multifunctional 2D FETs Exploiting Incipient Ferroelectricity in Freestanding SrTiO₃ Nanomembranes at Sub-Ambient Temperatures, Nat. Comm. 15, 10739 (2024)
S. Lee, D. J. P. deSousa, B. Jalan, and T. Low, Moiré polar vortex, flat bands and Lieb lattice in twisted bilayer BaTiO₃, Sci. Adv. 10, eadq0293 (2024)
F. Liu^†, Z. Yang^†, D. Abramovitch, S. Guo, K. A. Mkhoyan, M. Bernardi, and B. Jalan, Deep-ultraviolet transparent conducting SrSnO₃ via heterostructure design, Sci. Adv. 10, eadq7892 (2024) ^†Equal contribution (Highlighted by UMN News plus several news outlets, including Science Daily, EurekAlert, Semiconductor Engineering among others)
S. Varshney, M. Ramis, S. Choo, M. Coll, and B. Jalan, Epitaxially grown single-crystalline SrTiO₃ membranes using a solution-processed, amorphous SrCa₂Al₂O₆ sacrificial layer, J. Mater. Chem. C 12, 13809 (2024)
K. S. Kumar, D. Lee, S. Varshney, B. Jalan, and N. P. Armitage, Anomalous frequency and temperature dependent scattering in the dilute metallic phase in lightly doped-SrTiO₃, Phys. Rev. Lett. 133, 136003 (2024)
S. Nair, Z. Yang, K. Storr, and B. Jalan, High-mobility carriers in epitaxial IrO₂ films grown using hybrid molecular beam epitaxy, Nano Lett. 24 10850 (2024)
A. K. Rajapitamahuni, S. Nair, Z. Yang, A. K. Manjeshwar, S. G. Jeong, W. Nunn, and B. Jalan, Thickness-dependent insulator-to-metal transition in epitaxial RuO₂ films, Phys. Rev. Mater. 8, 075002 (2024)
M. Son, K. Sualiheen, S. Choi, S. G. Jeong, J.-S. Bae, S. Eom, D. H. Kim, J. Dho, B. Jalan, D. Lee, and K. T. Kang, Optimizing surface treatment for Nb-doped SrTiO₃ substrates: effects on structural and chemical properties, J Kor. Phys. Soc. 85, 183 (2024)
S. Varshney, S. Choo, L. Thompson, Z. Yang, J. Shah, J. Wen, S. J. Koester, K. A. Mkhoyan, A. McLeod, and B. Jalan, Hybrid Molecular Beam Epitaxy for single-crystalline oxide membranes with binary oxide sacrificial layers, ACS Nano 18, 6348 (2024) (featured on the journal cover)

2023

S. Nair, K. Noordhoek, D. Lee, C. J. Bartel, and B. Jalan, Solid-source metal-organic MBE for elemental Ir and Ru films, J. Vac. Sci. Technol. A 41, 062701 (2023)
S. Guo, H. Yun, S. Nair, B. Jalan, and K. A. Mkhoyan, Mending cracks atom-by-atom in rutile TiO₂ with electron beam radiolysis, Nat. Commun. 14, 6005 (2023) (Highlighted by UMN News)
A. K. Manjeshwar, S. Nair, A. K. Rajapitamahuni, R. D. James, and B. Jalan, Adsorption-controlled growth and magnetism in epitaxial SrRuO₃ films, ACS Nano 17, 20999 (2023) (featured on the journal cover)
F. Liu^†, P. Golani^†, T. K. Truttmann, I. Evangelista, M. A. Smeaton, D. Bugallo, J. Wen, A. K. Manjeshwar, S. J. May, L. F. Kourkoutis, A. Janotti, S. J. Koester, and B. Jalan, Doping the undopable: hybrid molecular beam epitaxy growth, n-type doping, and field-effect transistor using CaSnO₃, ACS Nano 17, 16912 (2023) ^†Equal contribution
D. Du, L. R. Thoutam, K. T. Genser, C. Zhang, K. M. Rabe, T. Samanta, T. Jung, B. Jalan, P. M. Voyles, and J. K. Kawasaki, Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films, Phys. Rev. Mater. 7, 084204 (2023)
C. Zhang, F. Liu, S. Guo, Y. Zhang, X. Xu, K. A. Mkhoyan, B. Jalan, and X. Wang, Temperature-dependent thermal conductivity of MBE-grown epitaxial SrSnO₃ films, Appl. Phys. Lett. 123, 042201 (2023)
J. Sylvester, R. Choudhary, B. Jalan, and F. Ganikhanov, Coherent phonon relaxation in strontium titanate, Appl. Phys. Lett. 123, 022201 (2023) (Editor’s Pick)
P. P. Sundaram, F. Liu, F. Alema, A. Osinsky, B. Jalan, and S. J. Koester, Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD, Appl. Phys. Lett. 122, 232105 (2023)
R. Choudhary, Z. Liu, J. Cai, X. Xu, J.-H. Chu, and B. Jalan, Growing clean crystals from dirty precursors: Solid-source metal-organic molecular beam epitaxy growth of superconducting Sr₂RuO₄ films, APL Mater. 11, 061124 (2023) (featured) (also see the Sci Highlight)
S. Nair, Z. Yang, D. Lee, S. Guo, J. T. Sadowski, S. Johnson, A. Saboor, Y. Li, H. Zhou, R. B. Comes, W. Jin, K. A. Mkhoyan, A. Janotti, and B. Jalan, Engineering metal oxidation using epitaxial strain, Nat. Nanotechnol. 18, 1005 (2023) (Highlighted by UMN News plus several news outlets, including Science Daily, EurekAlert, PhysOrg, ScienceNewsNet.)
W. Nunn, A. Kumar, R. Zu, B. Nebgen, S. Yu, A. K. Manjeshwar, V. Gopalan, J. M. LeBeau, R. D. James, and B. Jalan, Sn-modified BaTiO₃ thin film with enhanced polarization, J. Vac. Sci. Technol. A, 41, 022701 (2023)

2022

H. Yoon^†, T. K. Truttmann^†, F. Liu, B. E. Matthews, S. Choo, Q. Su, V. Saraswat, S. Manzo, M. S. Arnold, M. E. Bowden, J. K. Kawasaki, S. J. Koester, S. R. Spurgeon, S. A. Chambers, and B. Jalan, Freestanding epitaxial SrTiO₃ nanomembranes via remote epitaxy using hybrid molecular beam epitaxy, Sci. Adv. 8, eadd5328 (2022) ^†Equal contribution
M. Naamneh, E. B. Guedes, A. Prakash, H. M. Cardoso, M. Shi, N. C. Plumb, W. H. Brito, B. Jalan, and M. Radović, Low-dimensional electronic state at the surface of a transparent conductive oxide, Commun. Phys. 5, 317 (2022)
W. S. Samarakoon, P. V. Sushko, D. Lee, B. Jalan, H. Zhou, Y. Du, Z. Feng, and S. A. Chambers, Transient electron scavengers modulate carrier density at a polar/nonpolar perovskite oxide heterojunction, Phys. Rev. Mater. 6, 103405 (2022) (Editor's suggestion)
P. Golani, C. N. Saha, P. P. Sundaram, F. Liu, T. K. Truttmann, V. R. S. K. Chaganti, B. Jalan, U. Singisetti, and S. J. Koester, Self-heating in ultra-wide bandgap n-type SrSnO₃ thin films, Appl. Phys. Lett. 121, 162102 (2022)
F. Liu^†, T. K. Truttmann^†, D. Lee, B. E. Matthews, I. Laraib, A. Janotti, S. R. Spurgeon, S. A. Chambers, and B. Jalan, Hybrid molecular beam epitaxy of germanium-based oxides, Commun. Mater. 3, 69 (2022) ^†Equal contribution
R. Choudhary, S. Nair, Z. Yang, D. Lee, and B. Jalan, Semi-metallic SrIrO₃ films using solid-source metal-organic molecular beam epitaxy, APL Mater. 10, 091118 (2022)
A. D. Rata, J. Herrero-Martin, I. V. Maznichenko, F. M. Chiabrera, R. T. Dahm, S. Ostanin, D. Lee, B. Jalan, P. Buczek, I. Mertig, A. Ernst, A. M. Ionescu, K. Dörr, N. Pryds, and D.-S. Park, Defect-induced magnetism in homoepitaxial SrTiO₃, APL Mater. 10, 091108 (2022)
P. Adiga, W. Nunn, C. Wong, A. K. Manjeshwar, S. Nair, B. Jalan, and K. A. Stoerzinger, Breaking OER and CER scaling relations via strain and its relaxation in RuO₂ (101), Mater. Today Energy 28, 101087 (2022)
S. A. Chambers, D. Lee, Z. Yang, Y. Huang, W. Samarakoon, H. Zhou, P. V. Sushko, T. K. Truttmann, L. W. Wangoh, T.-L. Lee, J. Gabel, and B. Jalan, Probing electronic dead layers in homoepitaxial n-SrTiO₃(001) films, APL Mater. 10, 070903 (2022)
Z. Yang^†, D. Lee^†, J. Yue, J. Gabel, T.-L. Lee, R. D. James, S. A. Chambers, and B. Jalan, Epitaxial SrTiO₃ films with dielectric constants exceeding 25,000, Proc. Natl. Acad. Sci. U.S.A. 119, e2202189119 (2022) ^†Equal contribution
J. Yue, Y. Ayino, T. K. Truttmann, M. N. Gastiasoro, E. Persky, A. Khanukov, D. Lee, L. R. Thoutam, B. Kalisky, R. M. Fernandes, V. S. Pribiag, and B. Jalan, Anomalous transport in high-mobility superconducting SrTiO₃ thin films, Sci. Adv. 8, eabl5668 (2022)
K. S. Belthle, U. N. Gries, M. P. Mueller, D. Kemp, A. Prakash, M.-A. Rose, J. M. Börgers, B. Jalan, F. Gunkel, and R. A. De Souza, Quantitative determination of native point-defect concentrations at the ppm level in un-doped BaSnO₃ thin films, Adv. Func. Mater. 32, 2113023 (2022)
A. K. Rajapitamahuni, A. K. Manjeshwar, A. Kumar, A. Datta, P. Ranga, L. R. Thoutam, S. Krishnamoorthy, U. Singisetti, and B. Jalan, Plasmon-phonon coupling in electrostatically gated β-Ga₂O₃ films with mobility exceeding 200 cm²V^-1 s^-1, ACS Nano 16, 8812 (2022) (featured on the journal cover)
D. Lee, F. Liu, T. K. Truttmann, S. A. Chambers, and B. Jalan, Stoichiometry-dependent surface electronic structure of SrTiO₃ films grown by hybrid molecular beam epitaxy, Appl. Phys. Lett. 120, 121604 (2022)

2021

S. Hameed, J. Joe, L. R. Thoutam, J. Garcia-Barriocanal, B. Yu, G. Yu, S. Chi, T. Hong, T. J. Williams, J. W. Freeland, P. M. Gehring, Z. Xu, M. Matsuda, B. Jalan, M. Greven, Growth and characterization of large (Y,La)TiO₃ and (Y,Ca)TiO₃ single crystals, Phys. Rev. Mater. 5, 125003 (2021)
L. R. Thoutam, T. K. Truttmann, A. K. Rajapitamahuni, and B. Jalan, Hysteretic magnetoresistance in a non-magnetic SrSnO₃ film via thermal coupling to dynamic substrate behavior, Nano Lett. 21, 10006 (2021)
T. K. Truttmann, J.-J. Zhou, I-T. Lu, A. K. Rajapitamahuni, F. Liu, T. E. Mates, M. Bernardi, and B. Jalan, Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO₃, Commun. Phys. 4, 241 (2021)
W. Nunn, T. K. Truttmann and B. Jalan, A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors, J. Mater. Res. 36, 4846 (2021) (invited feature paper-review)
W. Nunn, S. Nair, H. Yun, A. K. Manjeshwar, A. Rajapitamahuni, D. Lee, K. A. Mkhoyan, and B. Jalan, Solid-source metal-organic molecular beam epitaxy of epitaxial RuO₂, APL Mater. 9, 091112 (2021) (Editor's Pick) (featured on the journal cover)
W. Nunn, A. K. Manjeshwar, J. Yue, A. Rajapitamahuni, T. K. Truttmann, and B. Jalan, Novel synthesis approach for “stubborn” metals and metal oxides, Proc. Natl. Acad. Sci. U.S.A. 118, e2105713118 (2021) (Highlighted on the front page of the DOE Office of Science website plus by several news outlets, including Science Daily, EurekAlert, PhysOrg, ScienceNewsNet, Materials Today, etc.)
W. Nunn, S. Sandlass, M. Wegner, R. Haislmaier, A. Kumar, M. Tangi, J. LeBeau, E. Quandt, R. D. James, and B. Jalan, Hybrid molecular beam epitaxy growth of BaTiO₃ films, J. Vac. Sci. Technol. A, 39, 040404 (2021) (Editor's Pick)
H. Yun, A. Prakash, T. Birol, B. Jalan, and K. A. Mkhoyan, Dopant segregation inside and outside dislocation cores in perovskite BaSnO₃ and reconstruction of the local atomic and electronic structures, Nano Lett. 21, 4357 (2021)
W. M. Postiglione, K. Ganguly, H. Yun, J. S. Jeong, A. Jacobson, L. Borgeson, B. Jalan, K. A. Mkhoyan, and C. Leighton, Structure-property relationships and mobility optimization in sputtered La-doped BaSnO₃ films: Toward 100 cm² V⁻¹ s⁻¹ mobility, Phys. Rev. Mater. 5, 044604 (2021)
V. R. S. K. Chaganti, P. Golani, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, Optimizing Ohmic contacts to Nd-doped n-type SrSnO₃, Appl. Phys. Lett. 118, 142104 (2021)
X. Cai, J. Yue, P. Xu, B. Jalan, and V. S. Pribiag, From weak antilocalization to Kondo scattering in a magnetic complex oxide interface, Phys. Rev. B 103, 115434 (2021)
T. K. Truttmann, F. Liu, J. Garcia-Barriocanal, R. D. James, and B. Jalan, Strain relaxation via phase transformation in high-mobility SrSnO₃ films, ACS Appl. Electron. Mater. 3, 1127 (2021)
A. K. Rajapitamahuni, L. R. Thoutam, P. Ranga, S. Krishnamoorthy, and B. Jalan, Impurity band conduction in Si-doped β-Ga₂O₃ films, Appl. Phys. Lett. 118, 072105 (2021)
H. Yun, M. Topsakal, A. Prakash, B. Jalan, J. S. Jeong, T. Birol, and K. A. Mkhoyan, Metallic line defect in wide-bandgap transparent perovskite BaSnO₃, Sci. Adv. 7, eabd4449 (2021)
A. Prakash, T. Wang, A. Bucsek, T. K. Truttmann, A. Fali, M. Cotrufo, H. Yun, J.-W. Kim, P. J. Ryan, K. A. Mkhoyan, A. Alù, Y. Abate, R. D. James, and B. Jalan, Self-assembled periodic nanostructures using martensitic phase transformations, Nano Lett. 21, 1246 (2021) (featured on the journal cover)
J. Wen, V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, SrSnO₃ metal-semiconductor field-effect transistor with GHz operation, IEEE Electron Dev. Lett. 42, 74 (2021) (featured on the journal cover)

2020

A. Prakash, T. Wang, R. Choudhary, G. Haugstad, W. L. Gladfelter, and B. Jalan, Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates, J. Vac. Sci. Technol. A 38, 063410 (2020)
J. Yue, N. F. Quackenbush, I. Laraib, H. Carfagno, S. Hameed, A. Prakash, L. R. Thoutam, J. M. Ablett, T.-L. Lee, M. Greven, M. F. Doty, A. Janotti, and B. Jalan, Electronic structure and small-hole polarons in YTiO₃, Phys. Rev. Mater. 4, 112001(R) (2020)
S. R. Provence, S. Thapa, R. Paudel, T. K. Truttmann, A. Prakash, B. Jalan, and R. B. Comes, Machine learning analysis of perovskite oxides grown by molecular beam epitaxy, Phys. Rev. Mater. 4, 083807 (2020)
V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, SrSnO₃ field-effect transistors with recessed gate electrodes, IEEE Electron Dev. Lett. 41, 1428 (2020)
H. Wang, A. Prakash, K. Reich, K. Ganguly, B. Jalan, and C. Leighton, Scattering mechanisms and mobility enhancement in epitaxial BaSnO₃ thin films probed via electrolyte gating, APL Mater. 8, 071113 (2020) (Editor’s Pick)
A. N. Bucsek, W. Nunn, B. Jalan, and R. D. James, Energy conversion by phase transformation in the small-temperature-difference regime, Annu. Rev. Mater. Res. 50, 283 (2020)
Y. Ayino, J. Yue, T. Wang, B. Jalan, and V. S. Pribiag, Effects of paramagnetic pair-breaking and spin-orbital coupling on multi-band superconductivity, J. Phys.: Condens. Matter 32, 38LT02 (2020)
H. Yun, A. Prakash, B. Jalan, J. S. Jeong, and K. A. Mkhoyan, STEM beam channeling in BaSnO₃/LaAlO₃ perovskite bilayers and visualization of 2D misfit dislocation network, Ultramicroscopy 208, 112863 (2020)

2019

U. S. Alaan, F. J. Wong, J. J. Ditto, A. W. Robertson, E. Lindgren, A. Prakash, G. Haugstad, P. Shafer, A. T. N’Diaye, D. Johnson, E. Arenholz, B. Jalan, N. D. Browning, and Y. Suzuki, Magnetism and transport in transparent high-mobility BaSnO₃ films doped with La, Pr, Nd, and Gd, Phys. Rev. Mater. 3, 124402 (2019)
A. Prakash, N. F. Quackenbush, H. Yun, J. Held, T. Wang, T. Truttmann, J. M. Ablett, C. Weiland, T.-L. Lee, J. C. Woicik, K. A. Mkhoyan, and B. Jalan, Separating electrons and donors in BaSnO₃via band engineering, Nano Lett. 19, 8920 (2019)
T. Truttmann, A. Prakash, J. Yue, T. E. Mates, and B. Jalan, Dopant solubility and charge compensation in La-doped SrSnO₃ films, Appl. Phys. Lett. 115, 152103 (2019)
A. Bucsek, W. Nunn, B. Jalan, and R. D. James, Direct conversion of heat to electricity using first-order phase transformations in ferroelectrics, Phys. Rev. Appl. 12, 034043 (2019)
J. Yue, L. R. Thoutam, A. Prakash, T. Wang, and B. Jalan, Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO₃ films, Appl. Phys. Lett. 115, 082102 (2019)
X. Cai, Y. Ayino, J. Yue, P. Xu, B. Jalan, and V. S. Pribiag, Disentangling spin-orbit coupling and local magnetism in a quasi-two-dimensional electron system, Phys. Rev. B 100, 081402(R) (2019)
A. Prakash and B. Jalan, Wide Bandgap Perovskite Oxides with High Room-Temperature Electron Mobility. Adv. Mater. Interfaces, 6, 1900479 (2019).
A. Prakash and B. Jalan, Molecular beam epitaxy for oxide electronics. In: Molecular Beam Epitaxy: Materials and applications for electronics and optoelectronics (ed. Hajime Asahi and Yoshiji Horikoshi), John Wiley & Sons, 423-452 (2019)
L. R. Thoutam, J. Yue, P. Xu, and B. Jalan, Hopping transport in SrTiO₃/NdTiO_3-x/SrTiO₃ heterostructures, Phys. Rev. Mater. 3, 065006 (2019)
L. R. Thoutam, J. Yue, A. Prakash, T. Wang, K. E. Elangovan, and B. Jalan, Electrostatic control of insulator-metal transition in La-doped SrSnO₃ films, ACS Appl. Mater. Interfaces 11, 7666 (2019)

2018

T. Wang^†, A. Prakash^†, Y. Dong, T. Truttmann, A. Bucsek, R. James, D. D. Fong, J.-W. Kim, P. J. Ryan, H. Zhou, T. Birol, and B. Jalan, Engineering SrSnO₃ phases and electron mobility at room temperature using epitaxial strain, ACS Appl. Mater. Interfaces 10, 43802 (2018) ^†Equal contribution
V. R. S. K. Chaganti, A. Prakash, J. Yue, B. Jalan, and S. J. Koester, Demonstration of a depletion-mode SrSnO₃ n-channel MESFET, IEEE Electron Dev. Lett. 39, 1381 (2018)
H. Yun, K. Ganguly, W. Postiglione, B. Jalan, C. Leighton, K. A. Mkhoyan, and J. S. Jeong, Microstructure characterization of BaSnO₃ thin films on LaAlO₃ and PrScO₃ substrates from transmission electron microscopy, Sci. Rep. 8, 10245 (2018)
J. Yue, A. Prakash, M. C. Robbins, S. J. Koester, and B. Jalan, Depletion mode MOSFET using La-doped BaSnO₃ as a channel material, ACS Appl. Mater. Interfaces 10, 21061 (2018)
S. A. Chambers, Y. Du, Z. Zhu, J. Wang, M. J. Wahila, L. F. J. Piper, A. Prakash, J. Yue, B. Jalan, S. R. Spurgeon, D. M. Kepaptsoglou, Q. M. Ramasse, and P. V. Sushko, Interconversion of intrinsic defects in SrTiO₃ (001), Phys. Rev. B 97, 245204 (2018)
W. Nunn, A. Prakash, A. Bhowmik, R. Haislmaier, J. Yue, J. M. Garcia Lastra, and B. Jalan, Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO₃ films, APL Mater. 6, 066107 (2018)
L. Chen, Y. Zhang, X. Wang, B. Jalan, S. Chen, and Y. Hou, Roles of point defects in thermal transport in perovskite barium stannate, J. Phys. Chem. C 122, 11482 (2018)
H. Yun, M. Topsakal, A. Prakash, K. Ganguly, C. Leighton, B. Jalan, R. M. Wentzcovitch, K. A. Mkhoyan, and J. S. Jeong, Electronic structure of BaSnO₃ investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations, J. Vac. Sci. Technol. A 36, 031503 (2018) (featured)
Y. Ayino, P. Xu, J. Tigre-Lazo, J. Yue, B. Jalan, and V. S. Pribiag, Ferromagnetism and spin-dependent transport at a complex oxide interface, Phys. Rev. Mater. 2, 031401(R) (2018)
S. Arezoomandan, A. Prakash, A. Chanana, J. Yue, J. Mao, S. Blair, A. Nahata, B. Jalan, and B. Sensale-Rodriguez, THz characterization and demonstration of visible-transparent/terahertz-functional electromagnetic structures in ultra-conductive La-doped BaSnO₃ films, Sci. Rep. 8, 3577 (2018)
Y. Ayino, J. Yue, T. Wang, B. Jalan, and V. S. Pribiag, Evidence for multi-band superconductivity above the Pauli limit in Nd_xSr_1-xTiO₃, [arxiv]

2017

T. Wang, L. R. Thoutam, A. Prakash, W. Nunn, G. Haugstad, and B. Jalan, Defect-driven localization crossovers in MBE-grown La-doped SrSnO₃ films, Phys. Rev. Mater. 1, 061601(R) (2017)
A. Prakash, P. Xu, A. Faghaninia, S. Shukla, J. W. Ager III, C. S. Lo, and B. Jalan, Wide bandgap BaSnO₃ films with room temperature conductivity exceeding 10⁴ S cm^-1, Nat. Commun. 8, 15167 (2017)
K. Ganguly, A. Prakash, B. Jalan, and C. Leighton, Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO₃, APL Mater. 5, 056102 (2017)
A. Prakash, P. Xu, X. Wu, G. Haugstad, X. Wang, and B. Jalan, Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO₃ films, J. Mater. Chem. C 5, 5730 (2017) (Emerging Investigator Invited Article)

2016

T. Wang, K. C. Pitike, Y. Yuan, S. M. Nakhmanson, V. Gopalan, and B. Jalan, Chemistry, growth kinetics, and epitaxial stabilization of Sn²⁺ in Sn-doped SrTiO₃ using (CH₃)₆Sn₂ tin precursor, APL Mater. 4, 126111, (2016)
J. S. Jeong, M. Topsakal, P. Xu, B. Jalan, R. M. Wentzcovitch, and K. A. Mkhoyan, A new line defect in NdTiO₃ perovskite, Nano Lett. 16, 6816 (2016)
P. Xu, Y. Ayino, C. Cheng, V. S. Pribiag, R. B. Comes, P. V. Sushko, S. A. Chambers, and B. Jalan, Predictive control over charge density in the two-dimensional electron gas at the polar-nonpolar NdTiO₃/SrTiO₃ interface, Phys. Rev. Lett. 117, 106803 (2016)
P. Ambwani, P. Xu, G. Haugstad, J. S. Jeong, R. Deng, K. A. Mkhoyan, B. Jalan, and C. Leighton, Defects, stoichiometry, and electronic transport in SrTiO_3-δ epilayers: A high pressure oxygen sputter deposition study, J. Appl. Phys. 120, 055704 (2016)
S. Arezoomandan, H. C. Quispe, A. Chanana, P. Xu, A. Nahata, B. Jalan, and B. Sensale-Rodriguez, Large nanoscale electronic conductivity in complex oxide heterostructures with ultra high electron density, APL Mater. 4, 076107 (2016)
J. S. Jeong, M. L. Odlyzko, P. Xu, B. Jalan, and K. A. Mkhoyan, Probing core-electron orbitals by scanning transmission electron microscopy and measuring the delocalization of core-level excitations, Phys. Rev. B 93, 165140 (2016)
S. A. Chambers, T. C. Kaspar, A. Prakash, G. Haugstad, and B. Jalan, Band alignment at epitaxial BaSnO₃/SrTiO₃(001) and BaSnO₃/LaAlO₃(001) heterojunctions, Appl. Phys. Lett. 108, 152104 (2016)
P. Xu, T. C. Droubay, J. S. Jeong, K. A. Mkhoyan, P. V. Sushko, S. A. Chambers, and B. Jalan, Quasi 2D ultrahigh carrier density in a complex oxide broken-gap heterojunction, Adv. Mater. Interfaces 3, 1500432 (2016)

2015

A. Prakash, J. Dewey, H. Yun, J. S. Jeong, K. A. Mkhoyan, and B. Jalan, Hybrid molecular beam epitaxy growth for stoichiometric BaSnO₃, J. Vac. Sci. Technol. A 33, 060608 (2015)
R. B. Comes, P. Xu, B. Jalan, and S. A. Chambers, Band alignment of epitaxial SrTiO₃ thin films with (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7(001), Appl. Phys. Lett. 107, 131601 (2015)
K. Ganguly, P. Ambwani, P. Xu, J. S. Jeong, K. A. Mkhoyan, C. Leighton, and B. Jalan, Structure and transport in high pressure oxygen sputter-deposited BaSnO_3-δ, APL Mater. 3, 062509 (2015) (invited article)
T. Wang, A. Prakash, E. Warner, W. L. Gladfelter, and B. Jalan, Molecular beam epitaxy growth of SnO₂ using a tin chemical precursor, J. Vac. Sci. Technol. A 33, 020606 (2015)

2014

P. Xu, D. Phelan, J. S. Jeong, K. A. Mkhoyan, and B. Jalan, Stoichiometry-driven metal-to-insulator transition in NdTiO₃/SrTiO₃ heterostructures, Appl. Phys. Lett. 104, 082109 (2014)

2013

T. Wang, K. Ganguly, P. Marshall, P. Xu, and B. Jalan, Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO₃ films, Appl. Phys. Lett. 103, 212904 (2013)
S. J. Allen, B. Jalan, S. B. Lee, D. G. Ouellette, G. Khalsa, J. Jaroszynski, S. Stemmer, and A. H. MacDonald, Conduction-band edge and Shubnikov-de Haas effect in low-electron-density SrTiO₃, Phys. Rev. B 88, 045114 (2013)
J. S. Jeong, P. Ambwani, B. Jalan, C. Leighton, and K. A. Mkhoyan, Observation of electrically-inactive interstitials in Nb-doped SrTiO₃, ACS Nano 7, 4487 (2013)

Before UMN

2012

A. Janotti, B. Jalan, S. Stemmer, and C. G. Van de Walle, Effects of doping on the lattice parameter of SrTiO₃, Appl. Phys. Lett. 100, 262104 (2012)
A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, and C. S. Fadley, Electronic structure of delta-doped La:SrTiO₃ layers by hard x-ray photoelectron spectroscopy, Appl. Phys. Lett. 100, 261603 (2012)

2011

D. J. Keeble, B. Jalan, L. Ravelli, W. Egger, G. Kanda, and S. Stemmer, Suppression of vacancy defects in epitaxial La-doped SrTiO₃ films, Appl. Phys. Lett. 99, 232905 (2011)
J. Son, B. Jalan, A. P. Kajdos, L. Balents, S. J. Allen, and S. Stemmer, Probing the metal-insulator transition of NdNiO₃ by electrostatic doping, Appl. Phys. Lett. 99, 192107 (2011)
D.-W. Oh, J. Ravichandran, C.-W. Liang, W. Siemons, B. Jalan, C. M. Brooks, M. Huijben, D. G. Schlom, S. Stemmer, L. W. Martin, A. Majumdar, R. Ramesh, and D. G. Cahill, Thermal conductivity as a metric for the crystalline quality of SrTiO₃ epitaxial layers, Appl. Phys. Lett. 98, 221904 (2011)
B. Jalan, S. J. Allen, G. E. Beltz, P. Moetakef, and S. Stemmer, Enhancing the electron mobility in SrTiO₃ with strain, Appl. Phys. Lett. 98, 132102 (2011)
P. Moetakef, J. Y. Zhang, A. Kozhanov, B. Jalan, R. Seshadri, S. J. Allen, and S. Stemmer, Transport in ferromagnetic GdTiO₃/SrTiO₃ heterostructures, Appl. Phys. Lett. 98, 112110 (2011)

2010

B. Jalan, S. Stemmer, S. Mack, and S. J. Allen, Two-dimensional electron gas in δ-doped SrTiO₃, Phys. Rev. B 82, 081103(R) (2010)
B. Jalan and S. Stemmer, Large Seebeck coefficients and thermoelectric power factor of La-doped SrTiO₃ thin films, Appl. Phys. Lett. 97, 042106 (2010)
J. Son^†, P. Moetakef^†, B. Jalan^†, O. Bierwagen^†, N. J. Wright, R. Engel-Herbert, and S. Stemmer, Epitaxial SrTiO₃ films with electron mobilities exceeding 30,000 cm² V^-1 s^-1, Nat. Mater. 9, 482 (2010) ^†Equal contribution

2009

R. Engel-Herbert, B. Jalan, J. Cagnon, and S. Stemmer, Microstructure of epitaxial rutile TiO₂ films grown by molecular beam epitaxy on r-plane Al₂O₃, J. Crys. Growth 312, 149 (2009)
B. Jalan, J. Cagnon, T. E. Mates, and S. Stemmer, Analysis of carbon in SrTiO₃ grown by hybrid molecular beam epitaxy, J. Vac. Sci. Technol. A 27, 1365 (2009)
J. M. LeBeau, R. Engel-Herbert, B. Jalan, J. Cagnon, P. Moetakef, S. Stemmer, and G. B. Stephenson, Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction, Appl. Phys. Lett. 95, 142905 (2009)
B. Jalan, P. Moetakef, and S. Stemmer, Molecular beam epitaxy of SrTiO₃ with a growth window, Appl. Phys. Lett. 95, 032906 (2009)
B. Jalan, R. Engel-Herbert, N. J. Wright, and S. Stemmer, Growth of high-quality SrTiO₃ films using a hybrid molecular beam epitaxy approach, J. Vac. Sci. Technol. A 27, 461 (2009)
B. Jalan, R. Engel-Herbert, J. Cagnon, and S. Stemmer, Growth modes in metal-organic molecular beam epitaxy of TiO₂ on r-plane sapphire, J. Vac. Sci. Technol. A 27, 230 (2009)

2008

B. Jalan, R. Engel-Herbert, T. E. Mates, and S. Stemmer, Effects of hydrogen anneals on oxygen deficient SrTiO_3-_x single crystals, Appl. Phys. Lett. 93, 052907 (2008)